InP / GaAsSb / InP Analysis of specific mater high current effect by ph

نویسندگان

  • C. Maneux
  • M. Belhaj
  • N. Labat
  • A. Touboul
چکیده

Although InP/GaAs0.51Sb0.49/InP DHBT has recently attracted much interest, some sensitive material parameters are still uncertain. We detailed the simulation methodology used to evaluate bandgap energy, minority carrier lifetime and band gap narrowing effect. Moreover, the high-injection effect is analysed as resulting from electron parasitic barrier formation at base-collector junction.

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تاریخ انتشار 2004